Electronic structures and transport properties of n-type-doped indium oxides
10.1021/jp5104164
Saved in:
Main Authors: | Chen Zhangxian, Huang Liang, Zhang Qingfan, Xi Yongjie, Li Ran, Li Wanchao, Xu Guoqin, Cheng Hansong |
---|---|
Other Authors: | CHEMISTRY |
Format: | Article |
Published: |
American Chemical Society
2016
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/127554 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Transparent indium zinc oxide ohmic contact to phosphor-doped n -type zinc oxide
by: Hu, G., et al.
Published: (2014) -
Transparent indium zinc oxide ohmic contact to phosphor-doped n -type zinc oxide
by: Hu, G., et al.
Published: (2014) -
Resistive switching in p-type nickel oxide/n-type indium gallium zinc oxide thin film heterojunction structure
by: Li, Huakai, et al.
Published: (2018) -
Magnetic and magnetotransport properties in copper and iron co-doped bulk indium oxide and indium tin oxide.
by: Ho, Hui Wen.
Published: (2009) -
Significant improvement in electronic properties of transparent amorphous indium zinc oxide through yttrium doping
by: Sun, J., et al.
Published: (2014)