PREPARATION AND CHARACTERIZATION OF TANTALUM PENTOXIDE FILMS
Master's
Saved in:
Main Author: | KANDASAMY SUNDARAM |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Theses and Dissertations |
Published: |
2020
|
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/172109 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
CHARACTERISATIION OF DEFECTS IN TANTALUM PENTOXIDE FILMS BY THERMALLY STIMULATED CURRENT
by: JOSEPHINE L. PREMILA
Published: (2020) -
Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications
by: Lau, Wai Shing, et al.
Published: (2014) -
Superiority of N2O plasma annealing over O2 plasma annealing for amorphous tantalum pentoxide (Ta2O5) films
by: Lau, Wai Shing, et al.
Published: (2014) -
Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy
by: Lau, W.S., et al.
Published: (2014) -
A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy
by: Lau, W.S., et al.
Published: (2014)