Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study

Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study

10.1063/1.4890960

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Bibliographic Details
Main Authors:	Wang, D.D, Wang, W.L, Huang, M.Y, Lek, A, Lam, J, Mai, Z.H
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	2020
Subjects:	Fourier transform infrared spectroscopy Bonding characteristics Comparative studies Degradation behavior Line Edge Roughness Raman and FTIR spectroscopy Technology development Time-dependent dielectric breakdown Ultra-low-k dielectrics Dielectric materials
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/183712
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Institution:	National University of Singapore

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Summary:	10.1063/1.4890960