Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study

Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study

10.1063/1.4890960

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Bibliographic Details
Main Authors: Wang, D.D, Wang, W.L, Huang, M.Y, Lek, A, Lam, J, Mai, Z.H
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: 2020
Subjects:
Fourier transform infrared spectroscopy
Bonding characteristics
Comparative studies
Degradation behavior
Line Edge Roughness
Raman and FTIR spectroscopy
Technology development
Time-dependent dielectric breakdown
Ultra-low-k dielectrics
Dielectric materials
Online Access:https://scholarbank.nus.edu.sg/handle/10635/183712
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Institution: National University of Singapore

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https://scholarbank.nus.edu.sg/handle/10635/183712

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