Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study

10.1063/1.4890960

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Main Authors: Wang, D.D, Wang, W.L, Huang, M.Y, Lek, A, Lam, J, Mai, Z.H
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: 2020
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Online Access:https://scholarbank.nus.edu.sg/handle/10635/183712
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spelling sg-nus-scholar.10635-1837122024-04-17T03:19:56Z Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study Wang, D.D Wang, W.L Huang, M.Y Lek, A Lam, J Mai, Z.H ELECTRICAL AND COMPUTER ENGINEERING Fourier transform infrared spectroscopy Bonding characteristics Comparative studies Degradation behavior Line Edge Roughness Raman and FTIR spectroscopy Technology development Time-dependent dielectric breakdown Ultra-low-k dielectrics Dielectric materials 10.1063/1.4890960 AIP Advances 4 7 77124 2020-11-19T07:17:40Z 2020-11-19T07:17:40Z 2014 Article Wang, D.D, Wang, W.L, Huang, M.Y, Lek, A, Lam, J, Mai, Z.H (2014). Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study. AIP Advances 4 (7) : 77124. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4890960 21583226 https://scholarbank.nus.edu.sg/handle/10635/183712 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Unpaywall 20201031
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Fourier transform infrared spectroscopy
Bonding characteristics
Comparative studies
Degradation behavior
Line Edge Roughness
Raman and FTIR spectroscopy
Technology development
Time-dependent dielectric breakdown
Ultra-low-k dielectrics
Dielectric materials
spellingShingle Fourier transform infrared spectroscopy
Bonding characteristics
Comparative studies
Degradation behavior
Line Edge Roughness
Raman and FTIR spectroscopy
Technology development
Time-dependent dielectric breakdown
Ultra-low-k dielectrics
Dielectric materials
Wang, D.D
Wang, W.L
Huang, M.Y
Lek, A
Lam, J
Mai, Z.H
Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study
description 10.1063/1.4890960
author2 ELECTRICAL AND COMPUTER ENGINEERING
author_facet ELECTRICAL AND COMPUTER ENGINEERING
Wang, D.D
Wang, W.L
Huang, M.Y
Lek, A
Lam, J
Mai, Z.H
format Article
author Wang, D.D
Wang, W.L
Huang, M.Y
Lek, A
Lam, J
Mai, Z.H
author_sort Wang, D.D
title Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study
title_short Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study
title_full Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study
title_fullStr Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study
title_full_unstemmed Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study
title_sort failure mechanism analysis and process improvement on time-dependent dielectric breakdown of cu/ultra-low-k dielectric based on complementary raman and ftir spectroscopy study
publishDate 2020
url https://scholarbank.nus.edu.sg/handle/10635/183712
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