Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study
10.1063/1.4890960
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sg-nus-scholar.10635-1837122024-04-17T03:19:56Z Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study Wang, D.D Wang, W.L Huang, M.Y Lek, A Lam, J Mai, Z.H ELECTRICAL AND COMPUTER ENGINEERING Fourier transform infrared spectroscopy Bonding characteristics Comparative studies Degradation behavior Line Edge Roughness Raman and FTIR spectroscopy Technology development Time-dependent dielectric breakdown Ultra-low-k dielectrics Dielectric materials 10.1063/1.4890960 AIP Advances 4 7 77124 2020-11-19T07:17:40Z 2020-11-19T07:17:40Z 2014 Article Wang, D.D, Wang, W.L, Huang, M.Y, Lek, A, Lam, J, Mai, Z.H (2014). Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study. AIP Advances 4 (7) : 77124. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4890960 21583226 https://scholarbank.nus.edu.sg/handle/10635/183712 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Unpaywall 20201031 |
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Fourier transform infrared spectroscopy Bonding characteristics Comparative studies Degradation behavior Line Edge Roughness Raman and FTIR spectroscopy Technology development Time-dependent dielectric breakdown Ultra-low-k dielectrics Dielectric materials |
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Fourier transform infrared spectroscopy Bonding characteristics Comparative studies Degradation behavior Line Edge Roughness Raman and FTIR spectroscopy Technology development Time-dependent dielectric breakdown Ultra-low-k dielectrics Dielectric materials Wang, D.D Wang, W.L Huang, M.Y Lek, A Lam, J Mai, Z.H Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study |
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10.1063/1.4890960 |
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ELECTRICAL AND COMPUTER ENGINEERING |
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ELECTRICAL AND COMPUTER ENGINEERING Wang, D.D Wang, W.L Huang, M.Y Lek, A Lam, J Mai, Z.H |
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Article |
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Wang, D.D Wang, W.L Huang, M.Y Lek, A Lam, J Mai, Z.H |
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Wang, D.D |
title |
Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study |
title_short |
Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study |
title_full |
Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study |
title_fullStr |
Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study |
title_full_unstemmed |
Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study |
title_sort |
failure mechanism analysis and process improvement on time-dependent dielectric breakdown of cu/ultra-low-k dielectric based on complementary raman and ftir spectroscopy study |
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2020 |
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https://scholarbank.nus.edu.sg/handle/10635/183712 |
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