Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study

• Main Authors: Wang, D.D, Wang, W.L, Huang, M.Y, Lek, A, Lam, J, Mai, Z.H
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Published: 2020
• Subjects: Fourier transform infrared spectroscopy; Bonding characteristics; Comparative studies; Degradation behavior; Line Edge Roughness; Raman and FTIR spectroscopy; Technology development; Time-dependent dielectric breakdown; Ultra-low-k dielectrics; Dielectric materials
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/183712
• Institution: National University of Singapore

10.1063/1.4890960