Development of low on state resistance power devices
Master's
Saved in:
Main Author: | GAN KIAN PAAU |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2011
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/27821 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Oxide-bypassed VDMOS (OBVDMOS): An alternative to superjunction high voltage MOS power devices
by: Liang, Y.C., et al.
Published: (2014) -
Simulation of superjunction MOSFET devices
by: ZHONG HANMEI
Published: (2010) -
A simple technology for superjunction device fabrication: Polyflanked VDMOSFET
by: Gan, K.P., et al.
Published: (2014) -
Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column Width
by: Yang, X., et al.
Published: (2014) -
Oxide bypassed power MOSFET devices
by: YANG XIN
Published: (2010)