Improved PECVD pre-metal oxide liner deposition process with low residual charge non-uniformity in film to avoid excessive PID
International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
Saved in:
Main Authors: | Cha, C.L., Vassiliev, V., Chor, E.F., See, A.K. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/50567 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
ICP etching and structure study of PECVD SiC films
by: Shi, J., et al.
Published: (2014) -
ICP etching of RF sputtered and PECVD silicon carbide films
by: Shi, J., et al.
Published: (2014) -
Uniformly Accelerating Charged Particles
by: Lyle, Stephen
Published: (2017) -
Process development for PECVD equipment
by: Yang, Jian Jun
Published: (2008) -
Mitigation of corner polysilicon residues through nitride liner etch relocation
by: Zheng, Zhe
Published: (2023)