Effects of thermal annealing on the band alignment of lanthanum aluminate on silicon investigated by x-ray photoelectron spectroscopy
10.1063/1.3264653
Saved in:
Main Authors: | Liu, Z.Q., Chiam, S.Y., Chim, W.K., Pan, J.S., Ng, C.M. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/55783 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Evaluating the use of electronegativity in band alignment models through the experimental slope parameter of lanthanum aluminate heterostructures
by: Liu, Z.Q., et al.
Published: (2014) -
Band gap, band offsets and dielectric constant improvement by addition of yttrium into lanthanum aluminate
by: Liu, Z.Q., et al.
Published: (2014) -
Thermal stability improvement of the lanthanum aluminate/silicon interface using a thin yttrium interlayer
by: Liu, Z.Q., et al.
Published: (2014) -
Effects of electric field in band alignment measurements using photoelectron spectroscopy
by: Chiam, S.Y., et al.
Published: (2014) -
Effects of annealing on the valence band offsets between hafnium aluminate and silicon
by: Chiam, S.Y., et al.
Published: (2014)