Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires

Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires

10.1063/1.3465327

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書目詳細資料
Main Authors:	Chin, H.-C., Gong, X., Ng, T.K., Loke, W.K., Wong, C.P., Shen, Z., Wicaksono, S., Yoon, S.F., Yeo, Y.-C.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/56758
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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