Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques

10.1109/RELPHY.2008.4559012

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Bibliographic Details
Main Authors:	Liu, Z.Y., Huang, D., Liu, W.J., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/69676
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Institution:	National University of Singapore

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record_format	dspace
spelling	sg-nus-scholar.10635-696762023-10-30T20:34:05Z Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques Liu, Z.Y. Huang, D. Liu, W.J. Liao, C.C. Zhang, L.F. Gan, Z.H. Wong, W. Li, M.-F. ELECTRICAL & COMPUTER ENGINEERING 10.1109/RELPHY.2008.4559012 IEEE International Reliability Physics Symposium Proceedings 733-734 2014-06-19T03:03:23Z 2014-06-19T03:03:23Z 2008 Conference Paper Liu, Z.Y., Huang, D., Liu, W.J., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F. (2008). Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques. IEEE International Reliability Physics Symposium Proceedings : 733-734. ScholarBank@NUS Repository. https://doi.org/10.1109/RELPHY.2008.4559012 9781424420506 15417026 http://scholarbank.nus.edu.sg/handle/10635/69676 000257615900159 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/RELPHY.2008.4559012
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, Z.Y. Huang, D. Liu, W.J. Liao, C.C. Zhang, L.F. Gan, Z.H. Wong, W. Li, M.-F.
format	Conference or Workshop Item
author	Liu, Z.Y. Huang, D. Liu, W.J. Liao, C.C. Zhang, L.F. Gan, Z.H. Wong, W. Li, M.-F.
spellingShingle	Liu, Z.Y. Huang, D. Liu, W.J. Liao, C.C. Zhang, L.F. Gan, Z.H. Wong, W. Li, M.-F. Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques
author_sort	Liu, Z.Y.
title	Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques
title_short	Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques
title_full	Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques
title_fullStr	Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques
title_full_unstemmed	Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques
title_sort	comprehensive studies of bti effects in cmosfets with sion by new measurement techniques
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/69676
_version_	1781783110249086976

Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques

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