Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques

10.1109/RELPHY.2008.4559012

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Bibliographic Details
Main Authors: Liu, Z.Y., Huang, D., Liu, W.J., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/69676
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Institution: National University of Singapore

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