Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts

Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts

10.1109/VLSIT.2008.4588553

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Bibliographic Details
Main Authors: Jiang, Y., Liow, T.Y., Singh, N., Tan, L.H., Lo, G.Q., Chan, D.S.H., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/71399
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Institution: National University of Singapore
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Summary:10.1109/VLSIT.2008.4588553

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