Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts

10.1109/VLSIT.2008.4588553

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Bibliographic Details
Main Authors:	Jiang, Y., Liow, T.Y., Singh, N., Tan, L.H., Lo, G.Q., Chan, D.S.H., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/71399
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-71399
record_format	dspace
spelling	sg-nus-scholar.10635-713992015-01-25T04:41:28Z Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts Jiang, Y. Liow, T.Y. Singh, N. Tan, L.H. Lo, G.Q. Chan, D.S.H. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VLSIT.2008.4588553 Digest of Technical Papers - Symposium on VLSI Technology 34-35 DTPTE 2014-06-19T03:23:18Z 2014-06-19T03:23:18Z 2008 Conference Paper Jiang, Y.,Liow, T.Y.,Singh, N.,Tan, L.H.,Lo, G.Q.,Chan, D.S.H.,Kwong, D.L. (2008). Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts. Digest of Technical Papers - Symposium on VLSI Technology : 34-35. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSIT.2008.4588553" target="_blank">https://doi.org/10.1109/VLSIT.2008.4588553</a> 9781424418053 07431562 http://scholarbank.nus.edu.sg/handle/10635/71399 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/VLSIT.2008.4588553
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Jiang, Y. Liow, T.Y. Singh, N. Tan, L.H. Lo, G.Q. Chan, D.S.H. Kwong, D.L.
format	Conference or Workshop Item
author	Jiang, Y. Liow, T.Y. Singh, N. Tan, L.H. Lo, G.Q. Chan, D.S.H. Kwong, D.L.
spellingShingle	Jiang, Y. Liow, T.Y. Singh, N. Tan, L.H. Lo, G.Q. Chan, D.S.H. Kwong, D.L. Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts
author_sort	Jiang, Y.
title	Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts
title_short	Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts
title_full	Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts
title_fullStr	Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts
title_full_unstemmed	Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts
title_sort	performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/71399
_version_	1681087376443572224

Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts

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