Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts

• Main Authors: Jiang, Y., Liow, T.Y., Singh, N., Tan, L.H., Lo, G.Q., Chan, D.S.H., Kwong, D.L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/71399
• Institution: National University of Singapore

10.1109/VLSIT.2008.4588553