Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts
10.1109/VLSIT.2008.4588553
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Main Authors: | Jiang, Y., Liow, T.Y., Singh, N., Tan, L.H., Lo, G.Q., Chan, D.S.H., Kwong, D.L. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/71399 |
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Institution: | National University of Singapore |
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