Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers

Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers

Applied Physics Letters

Saved in:

書目詳細資料
Main Authors:	Senapati, B., Samanta, S.K., Maikap, S., Bera, L.K., Maiti, C.K.
其他作者:	ELECTRICAL ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/80378
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

相似書籍

Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex
由: Samanta, S.K., et al.
出版: (2014)

Interface properties and reliability of ultrathin oxynitride films grown on strained Si1-xGex substrates
由: Samanta, S.K., et al.
出版: (2014)

Rapid thermal oxidation of Ge-rich Si1-xGex heterolayers
由: Bera, M.K., et al.
出版: (2014)

Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin films
由: Natarajan, A., et al.
出版: (2014)

Characterization of thick graded Si1-xGex/Si layers grown by low energy plasma enhanced chemical vapour deposition
由: Seng, H.L., et al.
出版: (2014)

Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers
由: Samanta, S.K., et al.
出版: (2014)

Thermal stability of strained Si/Si1-xGex heterostructures for advanced microelectronics devices
由: Wong, L.H., et al.
出版: (2014)

Doping dependence of intersubband transitions in Si1-xGex Si multiple quantum wells
由: Karunasiri, G., et al.
出版: (2014)

Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing
由: Setiawan, Y., et al.
出版: (2012)

Theoretical study of elementary processes in silicon-germanium epitaxial growth on SI(100) and SI1-xGEx (100) surfaces
由: LI QIANG
出版: (2010)

Enhanced boron activation in strained-Si/Si1-xGex substrate using laser annealing
由: Ong, K.K., et al.
出版: (2014)

Synthesis and characterization of Sn1-xGex anode materials via melt spinning
由: Goh, Brenda Kheng Leng.
出版: (2012)

Electrical transport of bottom-up grown single-crystal Si 1-xGex nanowire
由: Yang, W.F., et al.
出版: (2014)

Textured Ni(Pt) germanosilicide formation on a condensed Si1-xGex/Si substrate
由: Setiawan, Y., et al.
出版: (2012)

Solid-state reaction silicon nanocrystals in sol-gel tetraethylorthosilicate thin films
由: Lau, Hon Wu
出版: (2008)

Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed Si1-xGex/Si substrates
由: Setiawan, Y., et al.
出版: (2012)

The magnetic phase transition in Mn1.1Fe0.9P1−xGex magnetocaloric alloys
由: Chen, X., et al.
出版: (2015)

Low temperature metal-induced lateral crystallization of Si 1-xGex using silicide/germanide-forming-metals
由: Phung, T.H., et al.
出版: (2014)

Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing
由: Pey, Kin Leong, et al.
出版: (2012)

Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate
由: Li, Y. S., et al.
出版: (2013)

Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire
由: Whang, S.J., et al.
出版: (2014)

Determination of local lattice tilt in Si1-xGex virtual substrate using high resolution channeling contrast microscopy
由: Seng, H.L., et al.
出版: (2014)

Observation of local lattice tilts in strain-relaxed Si 1-xGex using high resolution channeling contrast microscopy
由: Seng, H.L., et al.
出版: (2014)

Fast ion conduction in the Li-analogues of Nasicon, Li1 + x [(Ta1 - xGex)Al](PO4)3
由: Leo, C.J., et al.
出版: (2014)

Laser-induced Ni(Pt) germanosilicide formation through a self-limiting melting phenomenon on Si1-xGex/Si heterostructure
由: Setiawan, Y., et al.
出版: (2012)

Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide
由: Latt, K.M., et al.
出版: (2014)

Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2gate dielectric
由: Yeo, C.C., et al.
出版: (2011)

Electrical properties of rapid thermal oxides on Si1-x-yGexCy films
由: Bera, L.K., et al.
出版: (2014)

Structural and electrical characterizations of oxynitride films on solid phase epitaxially grown silicon carbide
由: Bera, L.K., et al.
出版: (2014)

Gate dielectrics on strained-Si/SiGe heterolayers
由: Maiti, C.K., et al.
出版: (2014)

Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films
由: Choi, W.K., et al.
出版: (2014)

Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor deposition
由: Choi, W.K., et al.
出版: (2014)

Optical characterization of as-prepared and rapid thermal oxidized partially strain compensated Si1-x-y GexCy films
由: Feng, W., et al.
出版: (2014)

High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films
由: Bera, L.K., et al.
出版: (2014)

High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node
由: Suthram, S., et al.
出版: (2014)

The Effect of Polymethylmethacrylate and Tetraethylorthosilicate Concentration on PMMA/SiO2 Hybrid Membrane Properties
由: Jaya Ratri (NIM 105 03 059), Paramita

Plasma enhanced chemical vapor deposition growth of vanadium dioxide
由: LEE, Boon Peng
出版: (2019)

MODIFIKASI BONE CEMENT BERBASIS POLYMETHYLMETHACRYLATE (PMMA) DENGAN TETRAETHYLORTHOSILICATE (TEOS) DAN CALCIUM SALT
由: Mariyani, Dewi

Negative bias temperature instability on plasma-nitrided silicon dioxide film
由: Ang, C.-H., et al.
出版: (2014)

Negative bias temperature instability on plasma-nitrided silicon dioxide film
由: Ang, C.-H., et al.
出版: (2014)