Influence of Pt in a Ti-Al-Pt-Au ohmic contact on n-type GaN

Influence of Pt in a Ti-Al-Pt-Au ohmic contact on n-type GaN

10.1002/(SICI)1521-396X(199911)176:13.0.CO;2-F

Saved in:

書目詳細資料
Main Authors:	Kachwalla, Z., Wiggins, J.W., Chua, S.J., Wang, W.
其他作者:	ELECTRICAL ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/80598
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

相似書籍

Surface Modification and Ohmic Contact Formation to n and p-Type GaN
由: Choi, H.W., et al.
出版: (2014)

Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing
由: Tan, L.S., et al.
出版: (2014)

AlGaN/GaN high electron mobility transistors with implanted ohmic contacts
由: Wang, H.T., et al.
出版: (2014)

Effects of plasma surface treatment on ohmic contact to n-GaN
由: Chor, E.F., et al.
出版: (2014)

Non-gold ohmic contact for GaN-on-Si HEMT
由: Zhuang, Yihao
出版: (2023)

Effects of surface plasma treatment on n-GaN ohmic contact formation
由: Li, L.K., et al.
出版: (2014)

Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors
由: Li, Yang, et al.
出版: (2015)

Photoreflectance study of Au-Schottky contacts on n-GaN
由: Liu, W., et al.
出版: (2014)

Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contact
由: Bera, M.K., et al.
出版: (2014)

Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon
由: Li, Yang, et al.
出版: (2015)

Regrown ohmic contact to GaN-based high electron mobility transistors
由: Tan, Eleen
出版: (2023)

GaN based high mobility electron transistors with regrown ohmic contacts
由: Weng, Don Letian
出版: (2024)

Improvement of GaN light-emitting diodes with surface-treated Al-doped ZnO transparent Ohmic contacts by holographic photonic crystal
由: Yang, W.F., et al.
出版: (2014)

CMOS-compatible Ti/TiN/Al refractory ohmic contact for GaAs heterojunction bipolar transistors grown on Ge/Si substrate
由: Wang, Yue, et al.
出版: (2022)

Alternative (Pd,Ti,Au) contacts to (Pt,Ti,Au) contacts for In0.53Ga0.47As
由: Chor, E.F., et al.
出版: (2014)

Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
由: Chang, T.-F., et al.
出版: (2016)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
由: Kyaw, Zabu, et al.
出版: (2014)

Micro-Raman investigation of strain in GaN and Al xGa 1-xN/GaN heterostructures grown on Si(111)
由: Tripathy, S., et al.
出版: (2014)

Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure
由: Duan, Tian Li, et al.
出版: (2019)

Dislocation scattering in n-GaN
由: Choi, H.W., et al.
出版: (2014)

The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures
由: Liu, W., et al.
出版: (2014)

FABRICATION AND CHARACTERIZATION OHMIC CONTACTS MADE WITH AU/NI/GE/AU MULTILAYER METALLIZATION SYSTEM ON N-TYPE GALLIUM ARSENIDE
由: LEE SENG HIN
出版: (2020)

Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells
由: Sun, W.H., et al.
出版: (2014)

Electronic structures of AlGaN2 nanotubes and AlN-GaN nanotube superlattice
由: Pan, H., et al.
出版: (2014)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
由: Sun, Xiaowei, et al.
出版: (2013)

Plasma-induced damage to n-type GaN
由: Choi, H.W., et al.
出版: (2014)

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
由: Ju, Zhen Gang, et al.
出版: (2016)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
由: Zhang, Zi-Hui, et al.
出版: (2013)

Comments on "thermal resistance calculation of AlGaN-GaN devices"
由: Yin, W.-Y., et al.
出版: (2014)

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
由: Liu, X, et al.
出版: (2020)

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures
由: Whiteside, Matthew David
出版: (2021)

Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN
由: Fan, W.J., et al.
出版: (2014)

Probing the formation of two-dimensional electron gas in AlInGaN/ GaN heterostructures by photoluminescence spectroscopy
由: Soh, C.B., et al.
出版: (2014)

P-type doping in GaN through Be implantation
由: Feng, Z.C., et al.
出版: (2014)

Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaN
由: Soh, C.B., et al.
出版: (2014)

Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal
由: Arulkumaran, Subramaniam, et al.
出版: (2015)

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
由: Li, Yang, et al.
出版: (2017)

Photoreflectance study on the surface states of n-type GaN
由: Liu, W., et al.
出版: (2014)

Material characterization of AlGaN/GaN based HEMT structures
由: Nur Hidayat Bin Hatwi
出版: (2014)

Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN
由: Fan, W.J., et al.
出版: (2014)