Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphire

Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphire

Applied Physics Letters

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Bibliographic Details
Main Authors:	Hou, Y.T., Feng, Z.C., Chua, S.J., Li, M.F., Akutsu, N., Matsumoto, K.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80599
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Institution:	National University of Singapore

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