Interfacial polarization in Al-Y2O3-SiO2-Si capacitor
Electronics Letters
Saved in:
Main Author: | Ling, C.H. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80621 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Modeling the negative quadratic VCC of SiO2 in MIM capacitor
by: Phung, T.H., et al.
Published: (2014) -
Quasi-static and high frequency C-V measurements on Al/Ta2O5/SiO2/Si
by: Sundaram, K., et al.
Published: (2014) -
Nanoindentation hardness and modulus of Al2O3–SiO2–CaO and MnO–SiO2–FeO inclusions in iron
by: Slagter, Alejandra, et al.
Published: (2024) -
Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETs
by: Huang, C.H., et al.
Published: (2014) -
High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3
by: Ding, S.-J., et al.
Published: (2014)