New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs
Annual Proceedings - Reliability Physics (Symposium)
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Main Authors: | Leang, S.E., Chan, D.S.H., Chim, W.K. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81596 |
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Institution: | National University of Singapore |
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