A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gate

A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gate

10.1109/LED.2004.832535

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Bibliographic Details
Main Authors: Ren, C., Yu, H.Y., Kang, J.F., Wang, X.P., Ma, H.H.H., Yeo, Y.-C., Chan, D.S.H., Li, M.-F., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81863
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Institution: National University of Singapore
Description
Summary:10.1109/LED.2004.832535

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