Enhancing leakage suppression in carbon-rich silicon junctions
10.1109/LED.2006.874127
Saved in:
Main Authors: | Tan, C.F., Chor, E.F., Lee, H., Quek, E., Chan, L. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82295 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy
by: TAN CHUNG FOONG
Published: (2010) -
Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporation
by: Tan, C.F., et al.
Published: (2014) -
Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1-yCy in silicon
by: Tan, C.F., et al.
Published: (2014) -
N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy
by: Koh, S.-M., et al.
Published: (2014) -
Pulsed laser annealing of ultra-shallow junctions in silicon-germanium
by: Tan, L.S., et al.
Published: (2014)