Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors

Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors

10.1016/j.sse.2012.05.023

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書目詳細資料
Main Authors:	Da, H., Lam, K.-T., Samudra, G.S., Liang, G., Chin, S.-K.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
主題:	Device performance Doping concentration Graphene nanoribbon Heterojunction Tunneling field-effect transistors
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/82529
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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