Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration

10.1109/LED.2008.920275

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書目詳細資料
Main Authors:	Koh, A.T.-Y., Lee, R.T.-P., Liu, F.-Y., Liow, T.-Y., Tan, K.M., Wang, X., Samudra, G.S., Balasubramanian, N., Chi, D.-Z., Yeo, Y.-C.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
主題:	Laser anneal Mobility Series resistance Silicon-carbon Strain Transistors
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/82945
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

實物特徵
總結:	10.1109/LED.2008.920275

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