BTI and charge trapping in germanium p- And n-MOSFETs with CVD HfO 2 gate dielectric

BTI and charge trapping in germanium p- And n-MOSFETs with CVD HfO 2 gate dielectric

Technical Digest - International Electron Devices Meeting, IEDM

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Bibliographic Details
Main Authors: Wu, N., Zhang, Q., Zhu, C., Shen, C., Li, M.F., Chan, D.S.H., Balasubramanian, N.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83524
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Institution: National University of Singapore
Description
Summary:Technical Digest - International Electron Devices Meeting, IEDM

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