BTI and charge trapping in germanium p- And n-MOSFETs with CVD HfO 2 gate dielectric
Technical Digest - International Electron Devices Meeting, IEDM
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Conference or Workshop Item |
| Published: |
2014
|
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83524 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | National University of Singapore |