BTI and charge trapping in germanium p- And n-MOSFETs with CVD HfO 2 gate dielectric
Technical Digest - International Electron Devices Meeting, IEDM
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| 其他作者: | |
| 格式: | Conference or Workshop Item |
| 出版: |
2014
|
| 在線閱讀: | http://scholarbank.nus.edu.sg/handle/10635/83524 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 機構: | National University of Singapore |