Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions

Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions

Technical Digest - International Electron Devices Meeting, IEDM

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Bibliographic Details
Main Authors: Ang, K.W., Chui, K.J., Bliznetsov, V., Du, A., Balasubramanian, N., Li, M.F., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83700
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Institution: National University of Singapore
Description
Summary:Technical Digest - International Electron Devices Meeting, IEDM

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