Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions

Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions

Technical Digest - International Electron Devices Meeting, IEDM

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Bibliographic Details
Main Authors:	Ang, K.W., Chui, K.J., Bliznetsov, V., Du, A., Balasubramanian, N., Li, M.F., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83700
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Institution:	National University of Singapore

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