Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions

Technical Digest - International Electron Devices Meeting, IEDM

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Main Authors:	Ang, K.W., Chui, K.J., Bliznetsov, V., Du, A., Balasubramanian, N., Li, M.F., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83700
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83700
record_format	dspace
spelling	sg-nus-scholar.10635-837002015-02-05T21:24:31Z Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions Ang, K.W. Chui, K.J. Bliznetsov, V. Du, A. Balasubramanian, N. Li, M.F. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Technical Digest - International Electron Devices Meeting, IEDM 1069-1071 TDIMD 2014-10-07T04:44:11Z 2014-10-07T04:44:11Z 2004 Conference Paper Ang, K.W.,Chui, K.J.,Bliznetsov, V.,Du, A.,Balasubramanian, N.,Li, M.F.,Samudra, G.,Yeo, Y.-C. (2004). Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions. Technical Digest - International Electron Devices Meeting, IEDM : 1069-1071. ScholarBank@NUS Repository. 01631918 http://scholarbank.nus.edu.sg/handle/10635/83700 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Technical Digest - International Electron Devices Meeting, IEDM
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ang, K.W. Chui, K.J. Bliznetsov, V. Du, A. Balasubramanian, N. Li, M.F. Samudra, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Ang, K.W. Chui, K.J. Bliznetsov, V. Du, A. Balasubramanian, N. Li, M.F. Samudra, G. Yeo, Y.-C.
spellingShingle	Ang, K.W. Chui, K.J. Bliznetsov, V. Du, A. Balasubramanian, N. Li, M.F. Samudra, G. Yeo, Y.-C. Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions
author_sort	Ang, K.W.
title	Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions
title_short	Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions
title_full	Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions
title_fullStr	Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions
title_full_unstemmed	Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions
title_sort	enhanced performance in 50 nm n-mosfets with silicon-carbon source/drain regions
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83700
_version_	1681089484145295360

Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions

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