On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric

On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric

10.1109/IEDM.2007.4419072

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Bibliographic Details
Main Authors: Liu, W.J., Liu, Z.Y., Huang, D., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Shen, C., Li, M.-F.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84043
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Institution: National University of Singapore
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Summary:10.1109/IEDM.2007.4419072

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