On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric

• Main Authors: Liu, W.J., Liu, Z.Y., Huang, D., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Shen, C., Li, M.-F.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84043
• Institution: National University of Singapore

10.1109/IEDM.2007.4419072