On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric

10.1109/IEDM.2007.4419072

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Bibliographic Details
Main Authors:	Liu, W.J., Liu, Z.Y., Huang, D., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Shen, C., Li, M.-F.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84043
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84043
record_format	dspace
spelling	sg-nus-scholar.10635-840432023-10-26T09:37:34Z On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric Liu, W.J. Liu, Z.Y. Huang, D. Liao, C.C. Zhang, L.F. Gan, Z.H. Wong, W. Shen, C. Li, M.-F. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2007.4419072 Technical Digest - International Electron Devices Meeting, IEDM 813-816 TDIMD 2014-10-07T04:48:09Z 2014-10-07T04:48:09Z 2007 Conference Paper Liu, W.J., Liu, Z.Y., Huang, D., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Shen, C., Li, M.-F. (2007). On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric. Technical Digest - International Electron Devices Meeting, IEDM : 813-816. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4419072 01631918 http://scholarbank.nus.edu.sg/handle/10635/84043 000259347800186 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/IEDM.2007.4419072
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, W.J. Liu, Z.Y. Huang, D. Liao, C.C. Zhang, L.F. Gan, Z.H. Wong, W. Shen, C. Li, M.-F.
format	Conference or Workshop Item
author	Liu, W.J. Liu, Z.Y. Huang, D. Liao, C.C. Zhang, L.F. Gan, Z.H. Wong, W. Shen, C. Li, M.-F.
spellingShingle	Liu, W.J. Liu, Z.Y. Huang, D. Liao, C.C. Zhang, L.F. Gan, Z.H. Wong, W. Shen, C. Li, M.-F. On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric
author_sort	Liu, W.J.
title	On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric
title_short	On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric
title_full	On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric
title_fullStr	On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric
title_full_unstemmed	On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric
title_sort	on-the-fly interface trap measurement and its impact on the understanding of nbti mechanism for p-mosfets with sion gate dielectric
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84043
_version_	1781784415411634176

On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric

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