Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drain

• Main Authors: Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Ang, K.-W., Chui, K.-J., Guo, Q.-L., Samudra, G., Chi, D.-Z., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84113
• Institution: National University of Singapore

Materials Research Society Symposium Proceedings