Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drain

Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drain

Materials Research Society Symposium Proceedings

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Bibliographic Details
Main Authors:	Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Ang, K.-W., Chui, K.-J., Guo, Q.-L., Samudra, G., Chi, D.-Z., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84113
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Institution:	National University of Singapore

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