Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices

Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

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Bibliographic Details
Main Authors: Li, M.F., Yu, H.Y., Hou, Y.T., Kang, J.F., Wang, X.P., Shen, C., Ren, C., Yeo, Y.C., Zhu, C.X., Chan, D.S.H., Chin, A., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84162
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Institution: National University of Singapore
Description
Summary:International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

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