State-of-the-art surface passivation of boron emitters using inline PECVD AlOx/SiNx stacks for industrial high-efficiency silicon wafer solar cells
10.1109/PVSC.2012.6317780
Saved in:
Main Authors: | Duttagupta, S., Lin, F., Shetty, K.D., Wilson, M., Ma, F.-J., Lin, J., Aberle, A.G., Hoex, B. |
---|---|
Other Authors: | SOLAR ENERGY RESEARCH INST OF S'PORE |
Format: | Conference or Workshop Item |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84221 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacks
by: Duttagupta, S., et al.
Published: (2014) -
Excellent boron emitter passivation for high-efficiency Si wafer solar cells using AlOx/SiNx dielectric stacks deposited in an industrial inline plasma reactor
by: Duttagupta, S., et al.
Published: (2014) -
Numerical analysis of p+ emitters passivated by a PECVD AlO x/SiNx stack
by: Ma, F.-J., et al.
Published: (2014) -
Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties
by: Duttagupta, S., et al.
Published: (2014) -
Numerical modelling of silicon p+ emitters passivated by a PECVD AlOx/SiNx stack
by: Ma, F.-J., et al.
Published: (2014)