Study of interfaces between phase-change material Ge 2Sb 2Te 5 and prevalent complementary metal-oxide semiconductor materials by XPS

Study of interfaces between phase-change material Ge 2Sb 2Te 5 and prevalent complementary metal-oxide semiconductor materials by XPS

10.1002/sia.4881

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Bibliographic Details
Main Authors: Pan, J., Fang, L.W.-W., Zhang, Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
energy band alignment
Ge 2Sb 2Te 5
XPS
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84249
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Institution: National University of Singapore

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