Understanding and prediction of EWF modulation induced by various dopants in the gate stack for a gate-first integration scheme

Understanding and prediction of EWF modulation induced by various dopants in the gate stack for a gate-first integration scheme

10.1109/VLSIT.2008.4588603

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Bibliographic Details
Main Authors: Wang, X.P., Yu, H.Y., Yeo, Y.-C., Li, M.-F., Chang, S.-Z., Cho, H.-J., Kubicek, S., Wouters, D., Groeseneken, G., Biesemans, S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84339
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Institution: National University of Singapore
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Summary:10.1109/VLSIT.2008.4588603

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