Erratum: Micro-Raman investigation of strain in GaN and AlxGa1-xN/GaN heterostructures grown on Si(111) (Journal of Applied Physics (2002) 92 (3503))

Erratum: Micro-Raman investigation of strain in GaN and AlxGa1-xN/GaN heterostructures grown on Si(111) (Journal of Applied Physics (2002) 92 (3503))

Journal of Applied Physics

Saved in:

Bibliographic Details
Main Authors:	Tripathy, S., Chua, S.J., Chen, P., Miao, Z.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Others
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84402
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Micro-Raman investigation of strain in GaN and Al xGa 1-xN/GaN heterostructures grown on Si(111)
by: Tripathy, S., et al.
Published: (2014)

Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates
by: Aabdin, Zainul, et al.
Published: (2024)

Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator
by: Bera, L. K., et al.
Published: (2014)

Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon
by: Kyaw, L.M., et al.
Published: (2014)

Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1-XN quantum-well lasers
by: Yeo, Y.C., et al.
Published: (2014)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
by: Kyaw, Zabu, et al.
Published: (2014)

Compositional and morphological analysis of InxGa1-xN/GaN epilayers
by: Li, K., et al.
Published: (2014)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
by: Sun, Xiaowei, et al.
Published: (2013)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
by: Zhang, Zi-Hui, et al.
Published: (2013)

Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaN
by: Soh, C.B., et al.
Published: (2014)

Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure
by: Duan, Tian Li, et al.
Published: (2019)

Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE
by: Manvi Agrawal
Published: (2013)

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
by: Dolmanan, S. B., et al.
Published: (2013)

Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN
by: Fan, W.J., et al.
Published: (2014)

Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications
by: Wong, Yi Jing
Published: (2022)

Carrier concentration saturation in n type AlxGa1-xAs
by: Du, A.Y., et al.
Published: (2014)

Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN
by: Fan, W.J., et al.
Published: (2014)

Threading dislocations annihilation in regrown GaN film on nanoporous GaN template
by: Soh, C.B., et al.
Published: (2014)

Analysis of optical gain of strained wurtzite InxGa1-xN/GaN quantum well lasers
by: Chong, T.C., et al.
Published: (2014)

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template
by: Wang, Y.D., et al.
Published: (2014)

Investigation of Rh-based Schottky electrode on AlGaN/GaN heterostructure
by: Tian, F., et al.
Published: (2014)

Experimental demonstration of a two-dimensional hole gas in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy
by: Méchin, Loïc, et al.
Published: (2024)

Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates
by: Soh, C.B., et al.
Published: (2014)

Electronic and positron properties of zinc-blende structure of GaN, AlN, and their alloy Ga1-xAlxN
by: Al-Douri, Y.
Published: (2014)

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures
by: Whiteside, Matthew David
Published: (2021)

Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
by: Chang, T.-F., et al.
Published: (2016)

Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser
by: Fan, W.J., et al.
Published: (2014)

Probing the formation of two-dimensional electron gas in AlInGaN/ GaN heterostructures by photoluminescence spectroscopy
by: Soh, C.B., et al.
Published: (2014)

Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)
by: Lau, Sien Hui
Published: (2020)

Incorporation of self assembled In-rich InGaN nanostructure to achieve redshift in InGaN/GaN heterostructures
by: Soh, C.B., et al.
Published: (2014)

Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))
by: Song, T.L., et al.
Published: (2014)

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells
by: Li, M. F., et al.
Published: (2013)

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells
by: Fan, W.J., et al.
Published: (2014)

Electronic structures of the zinc-blende GaN/Ga1-xAlxN compressively strained superlattices and quantum wells
by: Fan, W.J., et al.
Published: (2014)

Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
by: Sandupatla, Abhinay, et al.
Published: (2020)

Studies of GaN-on-GaN vertical Schottky diodes for radiation sensing applications
by: Sandupatla, Abhinay
Published: (2020)

High quality GaN grown from a nanoporous GaN template
by: Hartono, H., et al.
Published: (2014)

Observation of carrier concentration saturation effect in n-type AlxGa1-xAs
by: Du, A.Y., et al.
Published: (2014)

Characterization of graded InGaN/GaN epilayers grown on sapphire
by: Song, T.L., et al.
Published: (2014)

Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
by: Duan, T.L, et al.
Published: (2020)