Low stress silicon nitride layers for MEMS applications
10.1117/12.696350
Saved in:
Main Authors: | Iliescu, C., Wei, J., Chen, B., Ong, P.L., Tay, F.E.H. |
---|---|
Other Authors: | MECHANICAL ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/86007 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
A new fabrication method of low stress PECVD SiNx layers for biomedical applications
by: Wei, J., et al.
Published: (2014) -
Process analysis and optimization on PECVD amorphous silicon on glass substrate
by: Ong, Y.Y., et al.
Published: (2014) -
Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties
by: Duttagupta, S., et al.
Published: (2014) -
Effects of metals on the nitridation of silicon and mechanical properties of silicon nitride products
by: Tananya Vongthavorn
Published: (2009) -
Effects of reaction parameters on the carbothermal reduction and nitridation of rice husk ash for silicon nitride synthesis
by: Ruttairat Precharyutasin
Published: (2006)