Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilution

Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilution

10.1063/1.1500418

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Bibliographic Details
Main Authors: Chew, K., Rusli, Yoon, S.F., Ahn, J., Ligatchev, V., Teo, E.J., Osipowicz, T., Watt, F.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/93988
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Institution: National University of Singapore
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Summary:10.1063/1.1500418

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