Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilution
10.1063/1.1500418
Saved in:
Main Authors: | Chew, K., Rusli, Yoon, S.F., Ahn, J., Ligatchev, V., Teo, E.J., Osipowicz, T., Watt, F. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/93988 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition
by: Cui, J., et al.
Published: (2014) -
Investigation of molybdenum-carbon films (Mo-C:H) deposited using an electron cyclotron resonance chemical vapor deposition system
by: Rusli, et al.
Published: (2014) -
Gap state distribution in amorphous hydrogenated silicon carbide films deduced from photothermal deflection spectroscopy
by: Chew, K., et al.
Published: (2014) -
Characteristics of nickel-containing carbon films deposited using electron cyclotron resonance CVD
by: Huang, Q.F., et al.
Published: (2014) -
Deposition of polymeric nitrogenated amorphous carbon films (a-C:H:N) using electron cyclotron resonance CVD
by: Yoon, S.F., et al.
Published: (2014)