Optical and physical properties of solgel-derived GeO2:SiO 2 films in photonic applications
10.1364/AO.46.004397
Saved in:
Main Authors: | Ho, C.K.F., Rajni, Djie, H.S., Pita, K., Ngo, N.Q., Osipowicz, T. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/97439 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Investigation of Ge nanocrystal formation in SiO2-Ge-SiO2 sandwich structure
by: Choi, W.K., et al.
Published: (2014) -
Photon-induced conduction modulation in SiO2 thin films embedded with Ge nanocrystals
by: Tan, M. C., et al.
Published: (2010) -
Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM
by: Ho, Y.W., et al.
Published: (2014) -
Factors affecting Ge nanocrystal size in co-sputtered Ge+SiO2 films
by: Choi, W.K., et al.
Published: (2014) -
Raman and photoluminescence characterization of Ge nanocrystals in co-sputtered Ge + SiO2 system
by: Choi, W.K, et al.
Published: (2014)