Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure

Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure

Applied Physics Letters

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書目詳細資料
Main Authors:	Huang, Y.S., Sun, W.D., Malikova, L., Pollak, F.H., Ferguson, I., Hou, H., Feng, Z.C., Ryan, T., Fantner, E.B.
其他作者:	PHYSICS
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/97845
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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