Fast and blister-free irradiation conditions for cross-linking of PMMA induced by 2 MeV protons
For soft lithography, the conventional negative tone resists, such as SU-8, that are used to create the mold have a number of drawbacks. PMMA, which is normally used as a positive tone resist, can be used as a negative resist by using high-fluence irradiation conditions. In this report, we outline o...
محفوظ في:
المؤلفون الرئيسيون: | Somrit Unai, Nitipon Puttaraksa, Nirut Pussadee, Kanda Singkarat, Michael W. Rhodes, Harry J. Whitlow, Somsorn Singkarat |
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التنسيق: | دورية |
منشور في: |
2018
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الوصول للمادة أونلاين: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84869083589&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/48137 |
الوسوم: |
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المؤسسة: | Chiang Mai University |
مواد مشابهة
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Fast and blister-free irradiation conditions for cross-linking of PMMA induced by 2 MeV protons
بواسطة: Somrit Unai, وآخرون
منشور في: (2018) -
Influence of MeV H + ion beam flux on cross-linking and blister formation in PMMA resist
بواسطة: Somrit Unai, وآخرون
منشور في: (2018) -
Fast and blister-free irradiation conditions for cross-linking of PMMA induced by 2 MeV protons
بواسطة: Unai S., وآخرون
منشور في: (2014) -
Fast and blister-free irradiation conditions for cross-linking of PMMA induced by 2 MeV protons
بواسطة: Unai S., وآخرون
منشور في: (2014) -
Influence of MeV H + ion beam flux on cross-linking and blister formation in PMMA resist
بواسطة: Unai S., وآخرون
منشور في: (2017)