Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement

by Chui, K.-J., Ang, K.-W., Chin, H.-C., Shen, C., Wong, L.-Y., Tung, C.-H., Balasubramanian, N., Li, M.F., Samudra, G.S., Yeo, Y.-C.
Published 2014

Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET

by Wong, H.-S., Ang, K.-W., Chan, L., Hoe, K.-M., Tung, C.-H., Balasubramaniam, N., Weeks, D., Landin, T., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C.
Published 2014

Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors

by Wong, H.-S., Ang, K.-W., Chan, L., Hoe, K.-M., Tung, C.-H., Balasubramanian, N., Weeks, D., Bauer, M., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C.
Published 2014

Source/drain germanium condensation for P-channel strained ultra-thin body transistors

by Chui, K.-J., Ang, K.-W., Madan, A., Wang, H., Tung, C.-H., Wong, L.-Y., Wang, Y., Choy, S.-F., Balasubramanian, N., Li, M.F., Samudra, G., Yeo, Y.-C.
Published 2014

A new source/drain germanium-enrichment process comprising Ge deposition and laser-induced local melting and recrystallization for P-FET performance enhancement

by Liu, F., Wong, H.-S., Ang, K.-W., Zhu, M., Wang, X., Lai, D.M.-Y., Lim, P.-C., Tan, B.L.H., Tripathy, S., Oh, S.-A., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Published 2014

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

by Liu, X, Gu, H, Li, K, Guo, L, Zhu, D, Lu, Y, Wang, J, Kuo, H.-C, Liu, Z, Liu, W, Chen, L, Fang, J, Ang, K.-W, Xu, K, Ao, J.-P
Published 2020

Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature

by Liu, X, Ang, K.-W, Yu, W, He, J, Feng, X, Liu, Q, Jiang, H, Tang, D, Wen, J, Lu, Y, Liu, W, Cao, P, Han, S, Wu, J, Wang, X, Zhu, D, He, Z
Published 2020

Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain

by Lee, R.T.P., Yang, L.-T., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Ang, K.-W., Lai, D.M.Y., Hoe, K.M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
Published 2014

Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors

by Wong, H.-S., Liu, F.-Y., Ang, K.-W., Koh, S.-M., Koh, A.T.-Y., Liow, T.-Y., Lee, R.T.-P., Lim, A.E.-J., Fang, W.-W., Zhu, M., Chan, L., Balasubramaniam, N., Samudra, G., Yeo, Y.-C.
Published 2014