Characterization of amphoteric multilayered thin films by means of zeta potential measurements

by Zhu, J.-H., Yu, H., Zhang, B., Fang, W.-W., Lao, X.-J.
Published 2011

Diamond-like carbon (DLC) liner: A new stressor for P-channel multiple-gate field-effect transistors

by Tan, K.-M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.-P., Balasubramanian, N., Yeo, Y.-C.
Published 2014

Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayers

by Lim, A.E.-J., Fang, W.-W., Liu, F., Lee, R.T.P., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C.
Published 2014

Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayers

by Lim, A.E.-J., Fang, W.-W., Liu, F., Lee, R.T.P., Samudra, G., Kwong, D.-L., Yeo, Y.-C.
Published 2014

Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain

by Tan, K.-M., Yang, M., Fang, W.-W., Lim, A.E.-J., Lee, R.T.-P., Liow, T.-Y., Yeo, Y.-C.
Published 2014

Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain

by Koh, S.-M., Sinha, M., Tong, Y., Chin, H.-C., Fang, W.-W., Zhang, X., Ng, C.-M., Samudra, G., Yeo, Y.-C.
Published 2014

A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET

by Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors

by Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors

by Wong, H.-S., Liu, F.-Y., Ang, K.-W., Koh, S.-M., Koh, A.T.-Y., Liow, T.-Y., Lee, R.T.-P., Lim, A.E.-J., Fang, W.-W., Zhu, M., Chan, L., Balasubramaniam, N., Samudra, G., Yeo, Y.-C.
Published 2014

Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced perf...

by Lee, R.T.-P., Koh, A.T.-Y., Fang, W.-W., Tan, K.-M., Lim, A.E.-J., Liow, T.-Y., Chow, S.-Y., Yong, A.M., Hoong, S.W., Lo, G.-Q., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Ultra-narrow silicon nanowire gate-all-around CMOS devices: Impact of diameter, channel-orientation and low temperature on device performance

by Singh, N., Lim, F.Y., Fang, W.W., Rustagi, S.C., Bera, L.K., Agarwal, A., Tung, C.H., Hoe, K.M., Omampuliyur, S.R., Tripathi, D., Adeyeye, A.O., Lo, G.Q., Balasubramanian, N., Kwong, D.L.
Published 2014

Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealing

by Lee, R.T.-P., Koh, A.T.-Y., Liu, F.-Y., Fang, W.-W., Liow, T.-Y., Tan, K.-M., Lim, P.-C., Lim, A.E.-J., Zhu, M., Hoe, K.-M., Tung, C.-H., Lo, G.-Q., Wang, X., Low, D.K.-Y., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
Published 2014