Switching model of taox-based nonpolar resistive random access memory

由 Tong, X., Wu, W., Liu, Z., Tran, X.A., Yu, H.Y., Yeo, Y.-C.
出版 2014

Self-selection unipolar HfOx-Based RRAM

由 Tran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y.
出版 2014

A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture

由 Tran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y.
出版 2014

Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics

由 Tran, X.A., Yu, H.Y., Gao, B., Kang, J.F., Sun, X.W., Yeo, Y.-C., Nguyen, B.Y., Li, M.F.
出版 2014

A self-rectifying HfO x-based unipolar RRAM with Nisi electrode

由 Tran, X.A., Zhu, W.G., Gao, B., Kang, J.F., Liu, W.J., Fang, Z., Wang, Z.R., Yeo, Y.C., Nguyen, B.Y., Li, M.F., Yu, H.Y.
出版 2014

High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application

由 Tran, X.A., Gao, B., Kang, J.F., Wu, L., Wang, Z.R., Fang, Z., Pey, K.L., Yeo, Y.C., Du, A.Y., Nguyen, B.Y., Li, M.F., Yu, H.Y.
出版 2014

A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration

由 Tran, X.A., Yu, H.Y., Yeo, Y.C., Wu, L., Liu, W.J., Wang, Z.R., Fang, Z., Pey, K.L., Sun, X.W., Du, A.Y., Nguyen, B.Y., Li, M.F.
出版 2014

Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials

由 Tran, X.A., Gao, B., Kang, J.F., Wu, X., Wu, L., Fang, Z., Wang, Z.R., Pey, K.L., Yeo, Y.C., Du, A.Y., Liu, M., Nguyen, B.Y., Li, M.F., Yu, H.Y.
出版 2014